DISCRETE SEMICONDUCTORS DATA SHEET
book, halfpage M3D100 BDX42; BDX43; BDX44
NPN Darlington transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04 1997 Jul 02 Philips Semiconductors Product specification NPN Darlington transistors BDX42; BDX43; BDX44
PINNING FEATURES
• High current (max. 1 A) PIN • Low voltage (max. 80 V) 1 emitter • Integrated diode and resistor. 2 collector, connected to metal part of
mounting surface APPLICATIONS 3 base DESCRIPTION • Industrial switching applications such as:
– print hammers
handbook, halfpage – solenoids 2 – relay and lamp drivers.
3 DESCRIPTION
NPN Darlington transistor in a TO-126; SOT32 plastic
package. PNP complements: BDX45 and BDX47. 1 1 Fig.1 2 3 Top view MAM349 Simplified outline (TO-126; SOT32)
and symbol. QUICK REFERENCE DATA
SYMBOL
VCBO PARAMETER
collector-base voltage CONDITIONS
open emitter 60 V BDX43 − − 80 V − − 90 V BDX42 − − 45 V BDX43 − − 60 V BDX44 − − 80 V − − 1 A collector-emitter voltage Ptot total power dissipation 1997 Jul 02 UNIT − collector current (DC) fT MAX. − IC hFE TYP. BDX42
BDX44
VCES MIN. DC current gain
transition frequency VBE = 0 Tamb ≤ 25 °C − − 1.25 W Tmb ≤ 100 °C − − 5 W IC = 150 mA; VCE = 10 V 1000 − − IC = 500 mA; VCE = 10 V 2000 − − IC = 500 mA; VCE = 5 V; f = 100 MHz − 200 − 2 MHz Philips Semiconductors Product specification NPN Darlington transistors BDX42; BDX43; BDX44 LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134). …
