Datasheet Infineon IRF5210STRRPBF — Даташит

PD -97049B IRF5210SPbF
IRF5210LPbF
HEXFET® Power MOSFET
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Ultra Low On-Resistance
150°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Some Parameters are Different from
IRF5210S/L
P-Channel
Lead-Free D VDSS = -100V
RDS(on) = 60mΩ G ID = -38A S D Description
Features of this design are a 150°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating . These features combine to make this design an extremely …