Datasheet Microchip VN1206L-G-P002 — Даташит

Supertex inc. VN1206 N-Channel Enhancement-Mode
Vertical DMOS FET
Features
в–єв–є
в–єв–є
в–єв–є
в–єв–є
в–єв–є
в–єв–є
в–єв–є General Description Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain This enhancement-mode (normally-off) transistor utilizes
a vertical DMOS structure and Supertex’s well-proven,
silicon-gate manufacturing process. This combination
produces a device with the power handling capabilities
of bipolar transistors and the high input impedance and
positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary …