Datasheet Vishay SI8416DB-T2-E1 — Даташит

Si8416DB
www.vishay.com Vishay Siliconix N-Channel 8 V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) 8 RDS(on) (пЃ—) MAX. ID (A) d 0.023 at VGS = 4.5 V 16 0.025 at VGS = 2.5 V 16 0.030 at VGS = 1.8 V 16 0.040 at VGS = 1.5 V 15 0.095 at VGS = 1.2 V 3 MICRO FOOTВ® 1.5 x 1 x
xxx xx
x
1 m m S
3 D
4 mm
1.5
1
Backside View Qg (TYP.) TrenchFETВ® power MOSFET Ultra-small 1.5 mm x 1 mm maximum outline Ultra-thin 0.59 mm maximum height 17 nC Material categorization:пЂ 
for definitions of compliance please see
www.vishay.com/doc?99912 APPLICATIONS S
2 1
G 6
S 5
D
Bump Side View D Low on-resistance load switch for
portable devicesпЂ 
-Low power consumption,пЂ 
low voltage dropпЂ 
-Increased battery lifeпЂ  …