Datasheet Texas Instruments 74ACT16541 — Даташит

Производитель	Texas Instruments
Серия	74ACT16541

Datasheets

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Статус

Корпус / Упаковка / Маркировка

Параметры

Parameters / Models	74ACT16541DL	74ACT16541DLG4	74ACT16541DLR
Bits	16	16	16
F @ Nom Voltage(Max), Mhz	90	90	90
ICC @ Nom Voltage(Max), мА	0.08	0.08	0.08
Рабочий диапазон температур, C	от -40 до 85	от -40 до 85	от -40 до 85
Output Drive (IOL/IOH)(Max), мА	-24/24	-24/24	-24/24
Package Group	SSOP	SSOP	SSOP
Package Size: mm2:W x L, PKG	48SSOP: 164 mm2: 10.35 x 15.88(SSOP)	48SSOP: 164 mm2: 10.35 x 15.88(SSOP)	48SSOP: 164 mm2: 10.35 x 15.88(SSOP)
Rating	Catalog	Catalog	Catalog
Schmitt Trigger	No	No	No
Technology Family	ACT	ACT	ACT
VCC(Max), В	5.5	5.5	5.5
VCC(Min), В	4.5	4.5	4.5
Voltage(Nom), В	5	5	5
tpd @ Nom Voltage(Max), нс	9.2	9.2	9.2

Экологический статус

Application Notes

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  Selecting the Right Level Translation Solution (Rev. A)
  PDF, 313 Кб, Версия: A, Файл опубликован: 22 июн 2004
  Supply voltages continue to migrate to lower nodes to support today's low-power high-performance applications. While some devices are capable of running at lower supply nodes others might not have this capability. To haveswitching compatibility between these devices the output of each driver must be compliant with the input of the receiver that it is driving. There are several level-translati
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  Introduction to Logic
  PDF, 93 Кб, Файл опубликован: 30 апр 2015
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  Implications of Slow or Floating CMOS Inputs (Rev. D)
  PDF, 260 Кб, Версия: D, Файл опубликован: 23 июн 2016
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  TI IBIS File Creation Validation and Distribution Processes
  PDF, 380 Кб, Файл опубликован: 29 авг 2002
  The Input/Output Buffer Information Specification (IBIS) also known as ANSI/EIA-656 has become widely accepted among electronic design automation (EDA) vendors semiconductor vendors and system designers as the format for digital electrical interface data. Because IBIS models do not reveal proprietary internal processes or architectural information semiconductor vendors? support for IBIS con
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  CMOS Power Consumption and CPD Calculation (Rev. B)
  PDF, 89 Кб, Версия: B, Файл опубликован: 1 июн 1997
  Reduction of power consumption makes a device more reliable. The need for devices that consume a minimum amount of power was a major driving force behind the development of CMOS technologies. As a result CMOS devices are best known for low power consumption. However for minimizing the power requirements of a board or a system simply knowing that CMOS devices may use less power than equivale
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  Designing With Logic (Rev. C)
  PDF, 186 Кб, Версия: C, Файл опубликован: 1 июн 1997
  Data sheets which usually give information on device behavior only under recommended operating conditions may only partially answer engineering questions that arise during the development of systems using logic devices. However information is frequently needed regarding the behavior of the device outside the conditions in the data sheet. Such questions might be:?How does a bus driver behave w
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  Using High Speed CMOS and Advanced CMOS in Systems With Multiple Vcc
  PDF, 43 Кб, Файл опубликован: 1 апр 1996
  Though low power consumption is a feature of CMOS devices sometimes this feature does not meet a designer?s system power supply constraints. Therefore a partial system power down or multiple Vcc supplies are used to meet the needs of the system. This document shows electrostatic discharge protection circuits. It also provides circuit and bus driver examples of partial system power down and curren

Модельный ряд

Классификация производителя

• Semiconductors> Logic> Buffer/Driver/Transceiver> Non-Inverting Buffer/Driver