Datasheet Texas Instruments 74ACT11374 — Даташит

Производитель	Texas Instruments
Серия	74ACT11374

Datasheets

Цены

Купить 74ACT11374 на РадиоЛоцман.Цены — от 12 до 193 ₽ 23 предложений от 20 поставщиков TEXAS INSTRUMENTS 74ACT11374DW Flip-Flop, 74ACT74, D, 8.5ns, 70MHz, 24mA, SOIC
LIXINC Electronics Весь мир	74ACT11374DWR Texas Instruments	от 12 ₽	Купить
ChipWorker Весь мир	74ACT11374DBLE Texas Instruments	54 ₽	Купить
EIS Components Весь мир	74ACT11374NSR Texas Instruments	80 ₽	Купить
ЭИК Россия	74ACT11374DBLE Texas Instruments	192 ₽	Купить

Статус

Корпус / Упаковка / Маркировка

Параметры

Parameters / Models	74ACT11374DBLE	74ACT11374DW	74ACT11374DWG4	74ACT11374DWR
3-State Output	Yes	Yes	Yes	Yes
Approx. Price (US$)	1.64 | 1ku
Bits		8	8	8
Bits(#)	8
F @ Nom Voltage(Max), Mhz		90	90	90
F @ Nom Voltage(Max)(Mhz)	90
ICC @ Nom Voltage(Max), мА		0.08	0.08	0.08
ICC @ Nom Voltage(Max)(mA)	0.08
Тип входа	TTL
Рабочий диапазон температур, C		от -40 до 85	от -40 до 85	от -40 до 85
Operating Temperature Range(C)	-40 to 85
Output Drive (IOL/IOH)(Max), мА		24/-24	24/-24	24/-24
Output Drive (IOL/IOH)(Max)(mA)	24/-24
Тип выхода	CMOS
Package Group	SO	SOIC	SOIC	SOIC
Package Size: mm2:W x L, PKG		24SOIC: 160 mm2: 10.3 x 15.5(SOIC)	24SOIC: 160 mm2: 10.3 x 15.5(SOIC)	24SOIC: 160 mm2: 10.3 x 15.5(SOIC)
Package Size: mm2:W x L (PKG)	See datasheet (PDIP)
Rating	Catalog	Catalog	Catalog	Catalog
Schmitt Trigger	No	No	No	No
Technology Family	ACT	ACT	ACT	ACT
VCC(Max), В		5.5	5.5	5.5
VCC(Max)(V)	5.5
VCC(Min), В		4.5	4.5	4.5
VCC(Min)(V)	4.5
Voltage(Nom), В		5	5	5
Voltage(Nom)(V)	5
tpd @ Nom Voltage(Max), нс		13	13	13
tpd @ Nom Voltage(Max)(ns)	13

Экологический статус

Application Notes

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  Supply voltages continue to migrate to lower nodes to support today's low-power high-performance applications. While some devices are capable of running at lower supply nodes others might not have this capability. To haveswitching compatibility between these devices the output of each driver must be compliant with the input of the receiver that it is driving. There are several level-translati
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  Forty-eight-pin TSSOP components that were packaged using Texas Instruments (TI) standard packing methodology were subjected to electrical discharges between 0.5 and 20 kV as generated by an IEC ESD simulator to determine the level of ISD protection provided by the packing materials. The testing included trays tape and reel and magazines. Additional units were subjected to the same discharge
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  PDF, 89 Кб, Версия: B, Файл опубликован: 1 июн 1997
  Reduction of power consumption makes a device more reliable. The need for devices that consume a minimum amount of power was a major driving force behind the development of CMOS technologies. As a result CMOS devices are best known for low power consumption. However for minimizing the power requirements of a board or a system simply knowing that CMOS devices may use less power than equivale
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  Power-Up Behavior of Clocked Devices (Rev. A)
  PDF, 34 Кб, Версия: A, Файл опубликован: 6 фев 2015
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  PDF, 186 Кб, Версия: C, Файл опубликован: 1 июн 1997
  Data sheets which usually give information on device behavior only under recommended operating conditions may only partially answer engineering questions that arise during the development of systems using logic devices. However information is frequently needed regarding the behavior of the device outside the conditions in the data sheet. Such questions might be:?How does a bus driver behave w
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  Using High Speed CMOS and Advanced CMOS in Systems With Multiple Vcc
  PDF, 43 Кб, Файл опубликован: 1 апр 1996
  Though low power consumption is a feature of CMOS devices sometimes this feature does not meet a designer?s system power supply constraints. Therefore a partial system power down or multiple Vcc supplies are used to meet the needs of the system. This document shows electrostatic discharge protection circuits. It also provides circuit and bus driver examples of partial system power down and curren

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• Semiconductors> Logic> Flip-Flop/Latch/Register> D-Type Flip-Flop