Datasheet Texas Instruments UC1708J — Даташит
Производитель | Texas Instruments |
Серия | UC1708 |
Модель | UC1708J |
Неинвертирующие высокоскоростные драйверы питания 8-CDIP от -55 до 125
Datasheets
Dual Non-Inverting Power Driver datasheet
PDF, 1.9 Мб, Версия: C, Файл опубликован: 25 сен 2007
Выписка из документа
Цены
Купить UC1708J на РадиоЛоцман.Цены — от 140 до 7 853 ₽ 21 предложений от 20 поставщиков MOSFET DRVR 3A 2-OUT High Speed Non-Inv 8-Pin CDIP - Rail/Tube (Alt: UC1708J) | |||
UC1708J/883B Texas Instruments | от 140 ₽ | ||
UC1708JE Texas Instruments | 1 744 ₽ | ||
UC1708JE883B Texas Instruments | 7 853 ₽ | ||
UC1708J Texas Instruments | по запросу |
Статус
Статус продукта | В производстве (Рекомендуется для новых разработок) |
Доступность образцов у производителя | Нет |
Корпус / Упаковка / Маркировка
Pin | 8 |
Package Type | JG |
Industry STD Term | CDIP |
JEDEC Code | R-GDIP-T |
Package QTY | 1 |
Carrier | TUBE |
Маркировка | UC1708J |
Width (мм) | 6.67 |
Length (мм) | 9.6 |
Thickness (мм) | 4.57 |
Pitch (мм) | 2.54 |
Max Height (мм) | 5.08 |
Mechanical Data | Скачать |
Параметры
Fall Time | 25 нс |
Input Threshold | CMOS,TTL |
Input VCC(Max) | 35 В |
Input VCC(Min) | 5 В |
Количество каналов | 2 |
Рабочий диапазон температур | от -55 до 125 C |
Package Group | CDIP |
Peak Output Current | 3 A |
Power Switch | MOSFET |
Prop Delay | 25 нс |
Rating | Military |
Rise Time | 25 нс |
Special Features | Enable Pin,Shutdown,Thermal Shutdown |
Экологический статус
RoHS | See ti.com |
Application Notes
- DN-35 IGBT Drive Using MOSFET Gate DriversPDF, 54 Кб, Файл опубликован: 5 сен 1999
The UC1708 family of power drivers is made with a high-speed high-voltage Schottky process to interface control functions and high-power switching devices-particularly power MOSFETs. The UC1724 family of Isolated Drive Transmitters along with the UC1725 Isolated Drivers provides a unique solution to driving isolated power MOSFET gates. They are particularly suited to drive the high-side devices - U-118 New Driver ICs Optimize High-Speed Power MOSFET Switching CharacteristicsPDF, 573 Кб, Файл опубликован: 5 сен 1999
The UC3705 family of power drivers is made with a high speed Schottky process to interface between low-level control functions and high-power switching devices particularly power MOSFETs. These devices are also an optimum choice for capacitive line drivers where up to 1.5 amps may be switched in either direction. With both inverting and non-inverting inputs available logic signals of either pola - U-137 Practical Considerations in High Performance MOSFET IGBT and MCT GatePDF, 244 Кб, Файл опубликован: 5 сен 1999
The switch-mode power supply industry's trend towards higher conversion frequencies is justified by the dramatic improvement in obtaining higher power densities. And as these frequencies are pushed towards and beyond one MHz the MOSFET transition periods can become a significant portion of the total switching period. Losses associated with the overlap of switch voltage and current not only degrad
Модельный ряд
Серия: UC1708 (8)
Классификация производителя
- Semiconductors > Space & High Reliability > Power Management Products > MOSFET and IGBT Gate Driver