Datasheet NGTB25N120IHLWG - ON Semiconductor Даташит IGBT, 1200 В, 25 А, TO247 — Даташит
Наименование модели: NGTB25N120IHLWG
Купить NGTB25N120IHLWG на РадиоЛоцман.Цены — от 88 до 1 747 ₽ 11 предложений от 11 поставщиков ON SEMICONDUCTOR NGTB25N120IHLWG IGBT Single Transistor, 50 A, 1.85 V, 192 W, 1.2 kV, TO-247, 3 Pins | |||
NGTB25N120IHLWG ON Semiconductor | 88 ₽ | ||
NGTB25N120IHLWG ON Semiconductor | 175 ₽ | ||
NGTB25N120IHLWG ON Semiconductor | 272 ₽ | ||
NGTB25N120IHLWG ON Semiconductor | 312 ₽ |
Подробное описание
Производитель: ON Semiconductor
Описание: IGBT, 1200 В, 25 А, TO247
Краткое содержание документа:
NGTB25N120IHLWG IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss.
The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free wheeling diode with a low forward voltage.
Features
http://onsemi.com
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Спецификации:
- Collector Emitter Voltage V(br)ceo: 1.2 кВ
- Collector Emitter Voltage Vces: 1.85 В
- DC Collector Current: 25 А
- Количество выводов: 3
- Корпус транзистора: TO-247
- Рабочий диапазон температрур: -55°C ... +150°C
- Рассеиваемая мощность: 250 Вт
- Тип транзистора: IGBT
- RoHS: да
- SVHC: No SVHC (19-Dec-2011)