Datasheet ON Semiconductor D45VH10G — Даташит

D44VH10(NPN),
D45VH10 (PNP)
Complementary Silicon
Power Transistors
These complementary silicon power transistors are designed for
high−speed switching applications, such as switching regulators and
high frequency inverters. The devices are also well−suited for drivers
for high power switching circuits.
Features •
•
•
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• Fast Switching
Key Parameters Specified @ 100°C
Low Collector−Emitter Saturation Voltage
Complementary Pairs Simplify Circuit Designs
These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS
Rating Symbol Value Unit Collector−Emitter Voltage VCEO 80 Vdc Collector−Emitter Voltage VCEV 100 Vdc Emitter Base Voltage VEB 7.0 Vdc IC 15 Adc Collector Current − Peak (Note 1) ICM 20 Adc Total Power Dissipation
@ TC = 25°C
Derate above 25°C PD
83
0.67 W
W/°C −55 to 150 °C Collector Current − Continuous Operating and Storage Junction …